DocumentCode
2349953
Title
Comparison of different CMOS low-noise amplifiers topologies for bluetooth applications
Author
Khan, M. Zamin ; Wang, Yanjie ; Raut, Rahul
Author_Institution
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que.
fYear
2005
fDate
6-7 April 2005
Firstpage
100
Lastpage
103
Abstract
A 0.65 V, 2.4 GHz, low noise amplifier (LNA) has been designed and simulated using Spectre simulator in a standard TSMC 0.18 mum CMOS technology. With low power and noise optimization techniques, the amplifier provides a gain of 27 dB, a noise figure of only 1.1 dB, power dissipation of 4.6 mW from a 0.65 V power supply. The proposed LNA achieves superior performance over conventional cascode topology and are confirmed by simulation results
Keywords
Bluetooth; CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit design; low-power electronics; network topology; optimisation; 0.18 mum; 0.65 V; 1.1 dB; 2.4 GHz; 27 dB; 4.6 mW; Bluetooth applications; CMOS low-noise amplifiers topologies; LNA; Spectre simulator; optimization techniques; standard TSMC; Application software; Bluetooth; Circuit noise; Energy consumption; Low-noise amplifiers; Noise figure; Noise generators; Power supplies; Radio frequency; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference
Conference_Location
Clearwater Beach, FL
Print_ISBN
0-7803-8861-5
Type
conf
DOI
10.1109/WAMIC.2005.1528393
Filename
1528393
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