Title :
An efficient physics-based gate current calculation by solving space-dependent Boltzmann transport equation
Author :
Lin, Hongchin ; Peng, Jack ZZ ; Goldsman, Neil ; Mayergoyz, I.D.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
A new efficient physics-based method to calculate gate current using space-dependent Boltzmann transport equation for electrons has been developed. The solution provides smooth space-dependent distribution functions for gate current calculation. The method spends less than 1% of the CPU time that the similar Monte Carlo method requires
Keywords :
Boltzmann equation; MOSFET; electric current; integro-differential equations; semiconductor device models; EPROM device; MOSFET; physics-based gate current calculation; space-dependent Boltzmann transport equation; Boltzmann equation; Current density; Distribution functions; EPROM; Educational institutions; Electrons; Lifting equipment; Monte Carlo methods; Phonons; Polynomials;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514143
