Title :
Influence of Fringe Field on Nano-Electromechanical (NEM) Memory Cells
Author :
Boram Han ; Ji Yong Song ; Woo Young Choi
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
The influence of fringe field on nano-electro-mechanical (NEM) memory cells has been investigated. Because fringe field effects become stronger with cells scaling down, it becomes more difficult to predict the characteristics of small-sized NEM memory cells accurately. In this paper, fringe field effects have been included into a finite-element model. The dependence of fringe field effects on cell parameters has also been evaluated.
Keywords :
finite element analysis; nanoelectromechanical devices; nanoelectronics; random-access storage; NEM nonvolatile memory cell; cell parameters; finite-element model; fringe field effects; nanoelectromechanical memory cells; small-sized NEM memory cell characteristics; Electron devices; Electrostatics; Finite element analysis; Force; Iron; Nonvolatile memory; Sensitivity; Finite-element (FE) method; fringe field effect; nano-electromechanical (NEM);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2013.2294892
