DocumentCode :
235072
Title :
Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production
Author :
Runiu Fang ; Min Miao ; Xin Sun ; Yunhui Zhu ; Guanjiang Wang ; Yichao Xu ; Minggang Sun ; Yufeng Jin
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
fYear :
2014
fDate :
27-30 May 2014
Firstpage :
641
Lastpage :
646
Abstract :
In the first three quarters of 2013, semiconductor industry witnessed a great multiplication of 12-inch TSV wafers mounting to 1 million plus scale. Despite this increasing popularity, TSV technology suffers from high cost due to yield loss caused by process defects. Poor insulation and connectivity are the major problems for TSV and RDL(Re-Distribution Line) structures. Without a cost-effective test system and methodology, the faulty TSVs may be stacked onto good ones and therefore bring forth an increasing chip cost. In this paper, the leakage current and pathway resistance are characterized for TSV and RDL structures, and a two-step in-line test methodology was proposed to pinpoint these defects and screen out KGDs (Known Good Dies) on the wafer. Also, a wafer-level fault-diagnosis system based on the proposed technology was built, including a probe station, an analyzer and a controller software, and two test instances were carried out on the test system. The test results demonstrated the capability of the test methodology and system, and proved the potential feasibility of the methodology for volume pre-bond test.
Keywords :
electric resistance; fault diagnosis; integrated circuit testing; leakage currents; three-dimensional integrated circuits; wafer level packaging; KGDs; RDL structures; TSV-RDL; known good dies; leakage current; pathway resistance; redistribution line structures; two-step in-line test methodology; volume pre-bond test; wafer-level commercial production; wafer-level fault-diagnosis system; Electric breakdown; Electrical resistance measurement; Leakage currents; Manufacturing processes; Probes; Resistance; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location :
Orlando, FL
Type :
conf
DOI :
10.1109/ECTC.2014.6897354
Filename :
6897354
Link To Document :
بازگشت