• DocumentCode
    2350911
  • Title

    CMOS low noise switched charge sensitive preamplifier for CdTe X-ray detection

  • Author

    Jakobson, Claudio G. ; Lavie, Dan ; Nemirovsky, Yael

  • fYear
    1995
  • fDate
    7-8 March 1995
  • Abstract
    A CdTe detector readout based on MOS switched charge sensitive preamplifier without feedback resistor is presented. CMOS technology allows high integration level, relatively low power consumption and provides a nearly ideal switch that does not introduce significant drift current to the integration capacitor. No external components are required. CdTe detectors combine low current with high resistivity and low capacitance that reduces noise levels. Noise performance is compared for semi-Gaussian pulse shaping and a low pass filter limiting of the preamplifier output. The more direct second approach exhibits very similar performance in comparison to the first one, due to 1/f noise; and can be better for specific shaping and reading times.
  • Keywords
    1/f noise; CMOS analogue integrated circuits; II-VI semiconductors; X-ray detection; cadmium compounds; detector circuits; nuclear electronics; preamplifiers; pulse shaping circuits; semiconductor counters; switched networks; 1/f noise; CMOS; CdTe; MOS switched circuits; X-ray detection; charge sensitive preamplifier; detector readout; integration capacitor; low pass filter limiting; power consumption; reading times; semi-Gaussian pulse shaping; shaping times; CMOS technology; Conductivity; Detectors; Energy consumption; Feedback; MOS capacitors; Noise shaping; Preamplifiers; Resistors; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Electronics Engineers in Israel, 1995., Eighteenth Convention of
  • Conference_Location
    Tel Aviv, Israel
  • Print_ISBN
    0-7803-2498-6
  • Type

    conf

  • DOI
    10.1109/EEIS.1995.514198
  • Filename
    514198