DocumentCode :
235093
Title :
An accurate and convenient lumped/discrete port de-embedding method for the 3D integration and packaging full-wave modeling by splitting and absorbing the Error-Cancelling Network
Author :
Zhaoqing Chen
Author_Institution :
IBM Corp., Poughkeepsie, NY, USA
fYear :
2014
fDate :
27-30 May 2014
Firstpage :
723
Lastpage :
729
Abstract :
In this paper, an accurate and convenient lumped/discrete port de-embedding method is proposed for full-wave modeling interconnect and packaging components with bump/pin array interfaces in the 3D integration and packaging systems. This method is based on splitting and absorbing the Error-Cancelling Network which was inserted in between two connected S-parameter models to cancel any error by the port parasitic parameters and uncertainty in port current and voltage definitions. In the proposed approach, the Error-Cancelling Network is split into two identical Half-Error-Cancelling networks by making use of the square root of the corresponding T-matrix of the error-cancelling network. Each half-error-cancelling network can be attached to and combined with the original S-parameter models to generate de-embedded S-parameters models without any additional and individual Error-Cancelling Network in appearance. This de-embedding method is a wide-band approach valid on every frequency point in the S-parameter model.
Keywords :
S-parameters; integrated circuit interconnections; integrated circuit modelling; integrated circuit packaging; three-dimensional integrated circuits; 3D integration; 3D packaging; S-parameter models; T-matrix; discrete port deembedding method; full-wave modeling; half error cancelling networks; lumped port deembedding method; pin array interfaces; port parasitic parameters; Calibration; Electromagnetics; Mathematical model; Ports (Computers); Scattering parameters; Silicon; Three-dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location :
Orlando, FL
Type :
conf
DOI :
10.1109/ECTC.2014.6897364
Filename :
6897364
Link To Document :
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