An SOI MOSFET model for circuit simulators considering nonlinear dynamic self-heating

Author

Bielefeld, J. ; Pelz, G. ; Abel, H.B. ; Zimmer, G.

Author_Institution

Dept. of Electron. Devices & Circuits, Duisburg Univ., Germany

fYear

1994

fDate

3-6 Oct 1994

Firstpage

9

Lastpage

10

Abstract

Modeling of the self-heating effect in SOI MOSFETs recently led to static and small-signal models of this device. Nevertheless, large-signal models taking into account this effect are not available yet. We fill this gap by presenting a large-signal electrothermal model of the SOI MOSFET for the simulator SPICE. The whole model is formulated as a set of algebraical and partial differential equations which is converted automatically by the model translator MEXEL into a SPICE3 netlist. The dynamics of the self-heating process are shown by several simulations

Keywords

MOS integrated circuits; MOSFET; SPICE; circuit analysis computing; partial differential equations; semiconductor device models; silicon-on-insulator; MEXEL; MOSFET model; SOI; SPICE3 netlist; circuit simulators; large-signal electrothermal model; model translator; nonlinear dynamic self-heating; partial differential equations; Capacitance; Circuit simulation; Electron devices; Electrothermal effects; Heat transfer; MOSFET circuits; Partial differential equations; Silicon on insulator technology; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514203

Filename

514203