DocumentCode
2351011
Title
Millimeter-wave low-noise amplifiers-an overview
Author
Weinreb, Sander
Author_Institution
Martin Marietta Lab., Baltimore, MD, USA
fYear
1989
fDate
15-18 Oct 1989
Firstpage
725
Abstract
The contributions to system noise, including those external to the receiving system, are discussed, with emphasis on the 30-100-GHz range and the latest results obtained with high-electron-mobility transistors (HEMTs). The different types of HEMTs are defined, and a table showing the achievable noise figures of multistage low-noise amplifiers as a function of frequency is presented. An example of a state-of-the-art 43-GHz HEMT amplifier operating at a temperature of 17 K is presented
Keywords
high electron mobility transistors; microwave amplifiers; solid-state microwave circuits; 17 K; 30 to 100 GHz; 43 GHz; EHF; HEMT amplifier; MM wave; high-electron-mobility transistors; multistage low-noise amplifiers; noise figures; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-frequency noise; Low-noise amplifiers; MODFETs; Noise figure; Semiconductor device noise; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Military Communications Conference, 1989. MILCOM '89. Conference Record. Bridging the Gap. Interoperability, Survivability, Security., 1989 IEEE
Conference_Location
Boston, MA
Type
conf
DOI
10.1109/MILCOM.1989.104018
Filename
104018
Link To Document