Sensing and MEMS devices in thin-film SOI MOS technology

Author

Raskin, Jean-Pierre

Author_Institution

Inst. of Inf. & Commun. Technol., Electron. & Appl. Math. (ICTEAM), Univ. Catholique de Louvain (UCL), Louvain-la-Neuve, Belgium

fYear

2011

fDate

3-6 Oct. 2011

Firstpage

1

Lastpage

38

Abstract

The presentation conclude that thick SOI MEMS are on the market, possibility to build high quality integrated sensors and actuators based on CMOS materials, cointegration of bulk and surface micromachined MEMS with their associated SOI CMOS electronics, internal stress in thin films is of interest to and build-up 3D MEMS and develop nanomechanical testing lab-on-chip.

Keywords

CMOS integrated circuits; electric actuators; electric sensing devices; internal stresses; lab-on-a-chip; micromechanical devices; nanotechnology; silicon-on-insulator; thin films; 3D MEMS; CMOS material; SOI CMOS electronics; high quality integrated actuator; high quality integrated sensor; nanomechanical testing lab-on-chip; sensing device; surface micromachined MEMS device; thin film internal stress; thin-film SOI MOS technology; CMOS integrated circuits; Industries; Integrated circuit modeling; Micromechanical devices; Semiconductor device modeling; Sensors; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2011 IEEE International

Conference_Location

Tempe, AZ

ISSN

1078-621X

Print_ISBN

978-1-61284-761-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2011.6081789

Filename

6081789