Modeling the I-V characteristics of fully-depleted SOI MOSFETs including self-heating

Author

Arora, Narain D. ; Su, Lisa T. ; Doyle, Brian S. ; Antoniadis, Dimitri A.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

19

Lastpage

20

Abstract

Fully-depleted Silicon-On-Insulator (SOI) MOSFETs are a strong potential candidate for future ULSI CMOS applications. In order to evaluate the merits of these devices an accurate model of the output characteristics applicable to sub-half micron channel lengths is needed. Previous work on modeling the I-V (current-voltage) characteristics of thin-film SOI MOSFETs has mainly been based on inaccurate velocity-field relation for carriers in the channel region. Moreover, in most models, conductance and capacitances show discontinuities at the transition points from subthreshold to saturation to linear regions. In this paper we report a physically based continuous analytical model for SOI MOSFETs that is represented by a single drain current equation valid in all regions of device operation ofinterest

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; I-V characteristics modelling; Si; ULSI CMOS applications; continuous analytical model; current-voltage characteristics; drain current equation; fully-depleted SOI MOSFETs; self-heating; subhalf micron channel lengths; CMOS technology; Data mining; MOSFETs; Semiconductor device modeling; Silicon on insulator technology; Temperature dependence; Temperature measurement; Threshold voltage; Transistors; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514208

Filename

514208