SOI MOSFET modeling using an AC conductance technique to determine heating

SOI technology is a prospect for future integrated circuits. It allows increased circuit speeds, simple device isolation, elimination of latchup, etc. However, SOI MOSFETs are susceptible to localized heating effects which reduces mobility and thus MOSFET current. We propose a new SPICE model for SOI MOSFETs which takes into account self-heating. Using an AC conductance measurement technique, we have isolated the MOSFET´s IV without self-heating. Using the BSIM3 MOSFET model, we are able to model the heating-free IV characteristics. We use an RC circuit to model the heating and adjust the mobility accordingly