DocumentCode :
2351125
Title :
FABRICATION AND PHOTOCONDUCTIVE SWITCHING PERFORMANCE OF HIGH GAIN Si DOPED Cu COMPENSATED GaAs
Author :
Lakdawala, V.K. ; Peterkin, F.E. ; Kale, M.V. ; Schoenbach, K.H. ; Thomas, L.M.
Volume :
2
fYear :
1993
fDate :
21-23 June 1993
Firstpage :
637
Keywords :
Copper; Diode lasers; Fabrication; Gallium arsenide; Optical materials; Performance gain; Photoconducting materials; Photoconductivity; Power lasers; Power semiconductor switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1993. Digest of Technical Papers., Ninth IEEE International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-1415-8
Type :
conf
DOI :
10.1109/PPC.1993.514211
Filename :
514211
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2351125
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