DocumentCode
2351243
Title
Hole density modeling of SiGe channel fully depleted SOI P-MOSFET
Author
Niu, G.F. ; Ruan, G. ; Huang, Y.P.
Author_Institution
Dept. of Electr. Eng., Fudan Univ., Shanghai, China
fYear
1994
fDate
3-6 Oct 1994
Firstpage
27
Lastpage
28
Abstract
The SiGe channel fully depleted SOI P-MOSFET has improved hole confinement compared to its bulk counterpart. We present here the modeling of the hole densities for this device to provide device design tools and explore the underlying physics
Keywords
Ge-Si alloys; MOSFET; hole density; semiconductor device models; semiconductor materials; silicon-on-insulator; Si; SiGe; SiGe channel SOI P-MOSFET; fully depleted SOI PMOSFET; hole confinement; hole density modeling; p-channel device; Doping; Electron devices; Germanium silicon alloys; MOSFET circuits; Physics; Semiconductor process modeling; Silicon germanium; Substrates; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location
Nantucket, MA
Print_ISBN
0-7803-2406-4
Type
conf
DOI
10.1109/SOI.1994.514218
Filename
514218
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