The Read Operation Impact on Charge Stored in the EEPROM Cell

The operation of memory cells of electrically erasable and programmable memory (EEPROM) for automotive electronics is investigated. The default memory cell and its operation principles are described. Measurement equipment for programming and erasing the cells in the memory array with precise control of programming electrical pulses parameters is described. The method of cell parameters measurement for any single cell in the array is suggested. The reason of disagreement of theoretical estimation and experimentally measured values of floating gate potentials is found. It is suggested, that the fast self-discharge of the floating gates during storage is caused not by thin oxide defects, but the read amplifier circuit concept. The way of increasing the cell reliability is suggested.