Title :
On buried-oxide effects in SOI lateral bipolar transistors
Author :
Banna, Srinivasa R. ; Chan, Philip C.H. ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
In this paper we present an investigation on the effects of buried oxide on Silicon-On-Insulator (SOI) lateral bipolar transistors. A buried oxide induced punchthrough effect is observed even for uniformly doped base profile and zero back-gate (substrate) bias. This punchthrough effect is attributed to the increased depletion widths at collector and emitter junctions (compared to bulk-Si) due to the buried oxide. The widely accepted depletion approximation fails to predict the depletion width in SOI p-n junctions. We propose a quasi two-dimensional model to compute the depletion width in an SOI p-n (step) junction
Keywords :
bipolar transistors; buried layers; semiconductor device models; silicon-on-insulator; SOI lateral bipolar transistors; SOI p-n junctions; Si; buried-oxide effects; depletion width prediction; punchthrough effect; quasi two-dimensional model; substrate bias; uniformly doped base profile; zero back-gate bias; Back; Bipolar transistors; Computational modeling; Equations; Medical simulation; Niobium; Predictive models; Silicon on insulator technology; Surface fitting; Voltage;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514219
