Process and design issues in a 600 V bonded wafer process

Author

Beasom, J.D. ; McLachlan, C.J.

Author_Institution

Harris Corp., Melbourne, FL, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

37

Lastpage

38

Abstract

Describes a bipolar process which provides moderate voltage vertical devices and 600V lateral devices. High breakdown is achieved using relatively thin islands with no buried layer. Island thickness and bond oxide thickness are the two material parameters which have a large influence on breakdown when island doping has been optimized. Island thickness in this work was chosen to be greater than 20 microns so that there is enough island under the base of the vertical bipolars to provide a low collector resistance. The maximum thickness used was 40 microns which is about the maximum thickness through which it is practical to RIE etch to form the lateral isolation trenches. The bond and side oxide thicknesses were set at 4 microns to achieve 600V breakdown in the chosen island thickness

Keywords

isolation technology; power bipolar transistors; semiconductor doping; silicon-on-insulator; sputter etching; wafer bonding; 20 to 40 micron; 600 V; RIE; bipolar process; bond oxide thickness; bonded wafer process; collector resistance; island doping; island thickness; lateral devices; lateral isolation trenches; material parameters; side oxide thickness; vertical devices; Breakdown voltage; Doping; Electric breakdown; Plasma measurements; Process design; Protection; Stress; Surface treatment; Wafer bonding; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514223

Filename

514223