DocumentCode :
235138
Title :
TSV module optimization for high performance silicon interposer
Author :
Cao, Austin ; Dinan, Thomas ; Zhuowen Sun ; Guilian Gao ; Uzoh, Cyprian ; Bong-Sub Lee ; Liang Wang ; Hong Shen ; Arkalgud, S.
Author_Institution :
Invensas, Inc., San Jose, CA, USA
fYear :
2014
fDate :
27-30 May 2014
Firstpage :
862
Lastpage :
867
Abstract :
This paper presents Invensas´ silicon interposer technology for heterogeneous chip integration. Various process module and integrated blocks were optimized for yield and high performance in the interposer. The modules under evaluation include TSV etch, barrier deposition, electrochemical plating, chemical mechanical polishing (CMP), temporary bonding, low temperature oxide (LTO) and low temperature polyimide (LTPI) passivation.
Keywords :
chemical mechanical polishing; chip scale packaging; electroplating; elemental semiconductors; optimisation; passivation; silicon; three-dimensional integrated circuits; TSV etch; TSV module optimization; barrier deposition; chemical mechanical polishing; electrochemical plating; heterogeneous chip integration; high performance silicon interposer; low temperature oxide; low temperature polyimide passivation; silicon interposer technology; temporary bonding; Copper; Polyimides; Surface treatment; Temperature measurement; Through-silicon vias; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location :
Orlando, FL
Type :
conf
DOI :
10.1109/ECTC.2014.6897387
Filename :
6897387
Link To Document :
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