DocumentCode
235142
Title
Challenges in 3D die stacking
Author
Grafe, Juergen ; Wahrmund, Wieland ; Dobritz, Stephan ; Wolf, J. ; Lang, K.-D.
Author_Institution
Fraunhofer IZM - ASSID, Moritzburg, Germany
fYear
2014
fDate
27-30 May 2014
Firstpage
873
Lastpage
877
Abstract
Many semiconductor companies are currently engaged in 3D system integration. The assembly of 3D compliant chips becomes a vital factor of the 3D application success and reliability. Major challenges are provided by very low chip thickness, large die size, small interconnect diameter and pitch. Diverse 3D assembly technologies and methods are currently under investigations which address these specific technical challenges. Stable and volume capable assembly processes must be developed in order to manufacture such products in future with reasonable cost. Wafer-to-wafer (W2W) assembly is not yet recommended for most of the advanced 3D applications since it still suffering from too high yield losses what would translate into unacceptable W2W stack yield. For that reason the die-to-die (D2D) assembly is considered as the more efficient way for the time being. For that reason we´re developing integrated assembly and test concepts on 300 mm wafer size to evaluate and validate various assembly technologies regarding to their capabilities with respect to interconnect materials, dimension, pitch and I/O density.
Keywords
microassembling; three-dimensional integrated circuits; 3D assembly technology; 3D compliant chip assembly; 3D die stacking challenges; die-to-die assembly; integrated assembly; size 300 mm; wafer-to-wafer assembly; Assembly; Bonding; Flip-chip devices; Resistance; Semiconductor device measurement; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location
Orlando, FL
Type
conf
DOI
10.1109/ECTC.2014.6897389
Filename
6897389
Link To Document