5I-2 Thick PZT Sol-Gel Films for pMUT Transducers Performances Improvement

Author

Belgacem, B. ; Calame, F. ; Muralt, P.

Author_Institution

Ceramics Lab., Ecole Polytechnique Federale de Lausanne

fYear

2006

fDate

2-6 Oct. 2006

Firstpage

926

Lastpage

929

Abstract

Piezoelectric micromachined ultrasonic transducers comprising a 10 mum thick Si device layer and a 1-4 mum thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was measured as -14.9 C/m². The electromechanical coupling increased stronger as expected with PZT thickness. The influence of both the shape and area of the top electrode on the device performance has been investigated. The electromechanical coupling coefficient (k) and quality factor (Q) have been measured in air and were fitted to an equivalent circuit model. The maximal k² was obtained as 7.8%

Keywords

piezoelectric transducers; sol-gel processing; thick films; ultrasonic transducers; Si device layer; electromechanical coupling coefficient; pMUT transducers performances improvement; piezoelectric PZT layer; piezoelectric micromachined ultrasonic transducers; quality factor; sol-gel technique; thick PZT sol-gel films; transverse piezoelectric coefficient; Coupling circuits; Electrodes; Equivalent circuits; Piezoelectric films; Piezoelectric transducers; Q factor; Q measurement; Shape; Ultrasonic transducers; Ultrasonic variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2006. IEEE

Conference_Location

Vancouver, BC

ISSN

1051-0117

Print_ISBN

1-4244-0201-8

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2006.247

Filename

4152103