Title :
Effects of implant angle on SIMOX structure and electrical properties of buried oxide
Author :
Anc, M.J. ; Krull, W.A.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
The approach presented by the authors revealed the effect of the implant angle on the major characteristics of SIMOX material such as thin film layer thicknesses and structure of buried oxide, pinhole density and pinhole patterns and background leakage current of the buried oxide. The obtained results show the importance of the investigated phenomena in the development of high integrity buried oxide SIMOX material and encourage further studies for the development of optimized standard and thin buried oxide SIMOX. The supporting data are presented in detail
Keywords :
SIMOX; buried layers; ion implantation; leakage currents; SIMOX structure; Si:O-SiO2; background leakage current; buried oxide; electrical properties; implant angle; pinhole density; pinhole patterns; thin film layer thicknesses; Conducting materials; Crystallography; Implants; Ion beams; Leakage current; Materials reliability; Monitoring; Silicon; Transmission line matrix methods; Ultra large scale integration;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514255
