Title :
Possible causes of trace metallic contaminants in SIMOX and BESOI substrates
Author :
Watanabe, Kaon ; Yoshino, Akira ; Morita, Makoto ; Okonogi, Kensuke ; Hamatake, Nobuhisa ; Kitajima, Hiroshi
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
From reliability point of view, detailed studies on metallic contaminants in SIMOX and BESOI substrates are strongly required. However, a main cause of metallic contaminants in SIMOX or BESOI substrates has not been clarified yet. In this paper, we present our VPD-AAS chemical analysis data on an extremely small quantity of metallic elements (below the detection limits of SIMS) detected in various SIMOX (Tsoi=100-320 nm) and BESOI (Tsoi=1.5 μm) substrates, and discuss possible causes of these trace metallic contaminants. These are concluded to be down to the wafer cleaning process and annealing
Keywords :
SIMOX; annealing; atomic absorption spectroscopy; semiconductor device reliability; semiconductor technology; silicon-on-insulator; surface cleaning; BESOI substrates; SIMOX substrates; Si; VPD-AAS; annealing; atomic absorption spectrometry; chemical analysis data; reliability; trace metallic contaminants; vapour phase decomposition; wafer cleaning process; Annealing; Chromium; Cleaning; Implants; Impurities; Iron; Oxidation; Semiconductor films; Substrates; Temperature;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514263
