Title :
Lateral carrier-domain magnetometer fabricated on BESOI
Author :
Lau, Jack ; Ko, Ping K. ; Chan, Philip C.H. ; Nguyen, Cuong T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
Most high sensitivity magnetic sensors can not be readily integrated using conventional IC technology. The authors report a lateral carrier domain magnetometer (LCDM) which takes advantage of the superior isolation property of the SOI technology. The LCDM, based on a combination of carrier domain effect, positive feedback, and Lorentz deflection, is fabricated on BESOI
Keywords :
isolation technology; magnetic sensors; magnetometers; semiconductor technology; silicon-on-insulator; BESOI; Lorentz deflection; SOI technology; carrier domain effect; high sensitivity magnetic sensors; isolation property; lateral carrier domain magnetometer; positive feedback; Application software; Back; Gaussian processes; Isolation technology; Lifting equipment; Magnetic field measurement; Magnetic sensors; Magnetometers; Medical simulation; Testing;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514267
