Porous SOS, BESOS and SOQ for flat panel emissive displays

Author

Russell, S.D. ; Dubbelday, W.B. ; Georgief, P. ; Shimabukuro, R.L. ; de la Houssaye, P.R.

Author_Institution

Naval Command Control & Ocean Surveillance Centre, San Diego, CA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

105

Lastpage

106

Abstract

The motivation for this research was to develop an efficient photonic source compatible with silicon VLSI technology for flat panel emissive displays, optical interconnections and optoelectronic applications. Recent research has shown that porous silicon layers can be formed on transparent substrates and offers unique device geometries due to the ability to observe the photoemission through the substrate rather than relying on semitransparent (Au) or transparent (ITO) electrodes. This report details the fabrication of porous silicon layers on transparent sapphire (SOS), quartz (SOQ) and bonded SOS (BESOS) and their corresponding emission spectra

Keywords

VLSI; field effect integrated circuits; flat panel displays; integrated optoelectronics; optical interconnections; porous materials; silicon-on-insulator; BESOS; SOQ; Si; VLSI technology; bonded SOS; flat panel emissive displays; optical interconnections; optoelectronic applications; photonic source; porous semiconductor layers; quartz; sapphire; transparent substrates; Electrodes; Flat panel displays; Geometrical optics; Gold; Indium tin oxide; Optical interconnections; Photoelectricity; Photonics; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514268

Filename

514268