Accurate physical model for the lateral IGBT in silicon on insulator technology

Volume

2

fYear

2005

fDate

20-23 June 2005

Firstpage

457

Abstract

Many vertical IGBT models are currently available. They have also been implemented in commercial simulators and describe device behavior both in steady-state and transient. However, no reliable device models have been proposed for the Lateral IGBT that is widely used in the field of smart power integrated circuits. In this paper a complete physical model for the Lateral IGBT fabricated in Silicon On Insulator technology is developed. The model is implemented in Pspice circuit simulator. Model results are compared against finite element device simulation. A comparison with the most common vertical IGBT Pspice model shows that vertical IGBT models are not able to correctly predict lateral IGBT behavior.

Keywords

finite element analysis; insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; power integrated circuits; silicon-on-insulator; Pspice circuit simulator; finite element device simulation; lateral IGBT models; silicon on insulator technology; smart power integrated circuits; steady-state behavior; transient behavior; Circuit simulation; Insulated gate bipolar transistors; Integrated circuit reliability; Numerical simulation; Power integrated circuits; Predictive models; Reliability engineering; Silicon on insulator technology; Steady-state; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on

Conference_Location

Dubrovnik, Croatia

Print_ISBN

0-7803-8738-4

Type

conf

DOI

10.1109/ISIE.2005.1528960

Filename

1528960