Generation and annihilation of interface states under alternate hot electron/hole injection in SOI MOSFET´s

Author

Sinha, Shankar P. ; Zaleski, Andrzej ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.

Author_Institution

Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

123

Lastpage

124

Abstract

The sequential front/back stressing technique was recently shown to be a powerful tool for studying hot-carrier degradation mechanisms in SOI MOSFETs. In this paper we use this technique, coupled with charge pumping, to analyze the effect of alternate electron/hole injection on interface states in SOI MOSFETs. Since this technique employs pure hot majority carrier injection from the opposite channel, the effect of electron and hole injections can be studied independent of each other. We observe that interface state creation takes place at the front interface following both electron injection and hole injection

Keywords

MOSFET; hot carriers; interface states; silicon-on-insulator; SOI MOSFETs; alternate electron/hole injection; charge pumping; electron injection; hole injection; hot-carrier degradation; interface states; sequential front/back stressing; Charge carrier processes; Charge pumps; Degradation; Electrons; Hot carriers; Interface states; Pulse measurements; Stress; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514277

Filename

514277