Electrons and holes injection and defect localization on thin and thick SOI transistors

Author

Guichard, E. ; Cristoloveanu, S. ; Reimbold, G. ; Borel, G.

Author_Institution

DMEL-CENG, LETI (CEA-Technol. Avancees), Grenoble, France

fYear

1994

fDate

3-6 Oct 1994

Firstpage

127

Lastpage

128

Abstract

This paper focusses on the physical nature of the localized defects and on the comparison between thin and thick SIMOX devices. Thick MOSFETs, processed on epitaxial SIMOX films 1.2 μm thick, behave very similarly to bulk Si transistors. Thin MOSFET´s were fabricated on 0.16 μm films and have characteristics corresponding to the transition between full and partial depletion (i.e weak interface coupling). Both N and P-channel transistors, with lengths of 0.5-1.4 μm, were stressed under various bias conditions. Several parameters (threshold voltage, transconductance and charge pumping current) were used to monitor the device degradation under static and alternating stresses

Keywords

MOSFET; SIMOX; defect states; hot carriers; interface states; semiconductor device reliability; 0.16 mum; 0.5 to 1.4 mum; 1.2 mum; MOSFET; N-channel transistors; P-channel transistors; SOI transistors; alternating stresses; bias conditions; charge pumping current; defect localization; device degradation; electron injection; epitaxial SIMOX films; full depletion; hole injection; hot carrier degradation; interface traps; partial depletion; static stresses; thick SIMOX devices; thin SIMOX devices; threshold voltage; transconductance; weak interface coupling; Aging; Charge carrier processes; Charge pumps; Degradation; Electron traps; Hot carriers; MOSFETs; Stress; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514279

Filename

514279