Hot-carrier-injection (HCI) immunity under high drain stress of thin-film SOI n-MOSFETs fabricated on SIMOX and BESOI substrates

Author

Wang, Janet ; Huang, W. Margaret ; Hwang, Bor-yuan ; Racanelli, Marco ; Foerstner, Jeurgen ; Woo, Jason

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

129

Lastpage

130

Abstract

BESOI MOSFETs exhibited very similar HCI behavior under the high drain bias stress condition to that of SIMOX devices. From charge pumping measurements significant interface generation was observed although significant charge trapping is also suggested by the degradation behavior

Keywords

MOSFET; SIMOX; hot carriers; interface states; semiconductor device reliability; silicon-on-insulator; thin film transistors; 105 angstrom; 900 angstrom; BESOI substrates; SIMOX substrate; charge pumping measurements; charge trapping; degradation behavior; film thickness; front gate transconductance; gate oxide thickness; high drain bias stress condition; hot carrier reliability; hot-carrier-injection immunity; interface generation; thin-film SOI n-MOSFETs; Charge pumps; Current measurement; Degradation; Hot carriers; Human computer interaction; MOSFET circuits; Semiconductor films; Stress; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514280

Filename

514280

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2352214