Title :
Hot-carrier-injection (HCI) immunity under high drain stress of thin-film SOI n-MOSFETs fabricated on SIMOX and BESOI substrates
Author :
Wang, Janet ; Huang, W. Margaret ; Hwang, Bor-yuan ; Racanelli, Marco ; Foerstner, Jeurgen ; Woo, Jason
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
BESOI MOSFETs exhibited very similar HCI behavior under the high drain bias stress condition to that of SIMOX devices. From charge pumping measurements significant interface generation was observed although significant charge trapping is also suggested by the degradation behavior
Keywords :
MOSFET; SIMOX; hot carriers; interface states; semiconductor device reliability; silicon-on-insulator; thin film transistors; 105 angstrom; 900 angstrom; BESOI substrates; SIMOX substrate; charge pumping measurements; charge trapping; degradation behavior; film thickness; front gate transconductance; gate oxide thickness; high drain bias stress condition; hot carrier reliability; hot-carrier-injection immunity; interface generation; thin-film SOI n-MOSFETs; Charge pumps; Current measurement; Degradation; Hot carriers; Human computer interaction; MOSFET circuits; Semiconductor films; Stress; Substrates; Transistors;
Conference_Titel :
SOI Conference, 1994 Proceedings., 1994 IEEE International
Conference_Location :
Nantucket, MA
Print_ISBN :
0-7803-2406-4
DOI :
10.1109/SOI.1994.514280
