DocumentCode
2352236
Title
Power converter EMI analysis including IGBT nonlinear switching transient model
Author
Jin, Meng ; Weiming, Ma
Author_Institution
Res. Inst. of Power Electron. Technol., Naval Univ. of Eng., Wuhan, China
Volume
2
fYear
2005
fDate
20-23 June 2005
Firstpage
499
Abstract
It is well known that very high dv/dt and di/dt during the switching instant is the major high frequency EMI source. This paper proposes an improved and simplified EMI modeling method considering the IGBT switching behavior model. The device turn-on and turn-off dynamics are investigated by dividing the nonlinear transition by several stages. The real device switching voltage and current are approximated by piecewise linear lines and expressed using multiple dv/dt and di/dt superposition. The derived EMI spectra suggest that the high frequency noise is modeled with an acceptable accuracy. The proposed methodology is verified by experimental results using a DC-DC buck converter.
Keywords
DC-DC power convertors; electromagnetic interference; insulated gate bipolar transistors; piecewise linear techniques; power bipolar transistors; switching convertors; switching transients; DC-DC buck converter; EMI modeling method; IGBT nonlinear switching transient model; high frequency noise; nonlinear transition; piecewise linear lines; power converter; switching currents; switching voltage; turn-off dynamics; turn-on dynamics; Buck converters; Delta modulation; Electromagnetic interference; Frequency; Insulated gate bipolar transistors; Noise level; Power generation; Switching converters; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on
Conference_Location
Dubrovnik, Croatia
Print_ISBN
0-7803-8738-4
Type
conf
DOI
10.1109/ISIE.2005.1528968
Filename
1528968
Link To Document