• DocumentCode
    2352236
  • Title

    Power converter EMI analysis including IGBT nonlinear switching transient model

  • Author

    Jin, Meng ; Weiming, Ma

  • Author_Institution
    Res. Inst. of Power Electron. Technol., Naval Univ. of Eng., Wuhan, China
  • Volume
    2
  • fYear
    2005
  • fDate
    20-23 June 2005
  • Firstpage
    499
  • Abstract
    It is well known that very high dv/dt and di/dt during the switching instant is the major high frequency EMI source. This paper proposes an improved and simplified EMI modeling method considering the IGBT switching behavior model. The device turn-on and turn-off dynamics are investigated by dividing the nonlinear transition by several stages. The real device switching voltage and current are approximated by piecewise linear lines and expressed using multiple dv/dt and di/dt superposition. The derived EMI spectra suggest that the high frequency noise is modeled with an acceptable accuracy. The proposed methodology is verified by experimental results using a DC-DC buck converter.
  • Keywords
    DC-DC power convertors; electromagnetic interference; insulated gate bipolar transistors; piecewise linear techniques; power bipolar transistors; switching convertors; switching transients; DC-DC buck converter; EMI modeling method; IGBT nonlinear switching transient model; high frequency noise; nonlinear transition; piecewise linear lines; power converter; switching currents; switching voltage; turn-off dynamics; turn-on dynamics; Buck converters; Delta modulation; Electromagnetic interference; Frequency; Insulated gate bipolar transistors; Noise level; Power generation; Switching converters; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on
  • Conference_Location
    Dubrovnik, Croatia
  • Print_ISBN
    0-7803-8738-4
  • Type

    conf

  • DOI
    10.1109/ISIE.2005.1528968
  • Filename
    1528968