Moat edge oriented defects and buried oxide leakage in SIMOX integrated circuits

Author

Brown, Grorge A. ; Jenkins, William C.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

133

Lastpage

134

Abstract

We present evidence far the existence of a moat-edge-oriented defect distribution in SIMOX integrated circuits that provides an avenue for resolution of discrepancies between finished circuit quiescent substrate leakage (IBBQ) yields and buried oxide defect densities measured at pre-process materials qualification. The test structure used here is proposed as a process control vehicle for the silicon moat etching process and subsequent buried oxide etching, key components to the evolution of these defects

Keywords

CMOS integrated circuits; SIMOX; buried layers; circuit optimisation; integrated circuit measurement; integrated circuit yield; sputter etching; BOXCAP; CMOS SIMOX; CMOS yield optimization; IBBQ yield; SIMOX integrated circuits; Si moat etching process; buried oxide capacitors; buried oxide defect densities; buried oxide etching; buried oxide leakage; moat edge oriented defects; preprocess materials qualification; process control vehicle; quiescent substrate leakage; test structure; Area measurement; Circuit testing; Density measurement; Etching; Instruments; Integrated circuit measurements; Process control; Qualifications; Random access memory; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514282

Filename

514282