• DocumentCode
    235312
  • Title

    Improvement of substrate and package warpage by copper plating process optimization

  • Author

    Bchir, Ouiem ; Jomaa, Houssam ; Chin Kwan Kim ; Rouhana, Layal ; Kuiwon Kang ; Shah, Mubarak ; Bezuk, Steve

  • Author_Institution
    Qualcomm Technol., Inc., San Diego, CA, USA
  • fYear
    2014
  • fDate
    27-30 May 2014
  • Firstpage
    1396
  • Lastpage
    1400
  • Abstract
    High substrate warpage can lead to unacceptable yield loss during chip attach in assembly, and cause high yield fallout during package mount on the circuit board. For the first time, through this work, the electrolytic copper (Cu) plating process in substrate manufacturing was shown to contribute significantly to package warpage. For a 14×14mm package, reducing the Cu plating rate (within the manufacturing operating window) resulted in 21% package warpage reduction, while a change in Cu plating solution provided an additional 6% reduction (total 27% reduction). Hence the Cu plating process and solution must be carefully scrutinized to minimize package warpage, specifically for thin packages (<;1mm) where Cu stresses become a large contributing factor.
  • Keywords
    copper; electroplating; integrated circuit packaging; integrated circuit reliability; Cu; Cu plating process; chip attach; circuit board; electrolytic copper plating process; high substrate warpage; high yield fallout; package mount; package warpage; substrate manufacturing; Chemistry; Copper; Current density; Residual stresses; Substrates; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
  • Conference_Location
    Orlando, FL
  • Type

    conf

  • DOI
    10.1109/ECTC.2014.6897475
  • Filename
    6897475