Title :
Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs
Author :
Tiwari, S. ; Welser, J.J. ; DiMaria, D.J. ; Rana, F.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Oxide insulator thickness and its ability to control the carrier flow along a surface channel with low power dissipation and high endurance is central to the scaling of the MOSFET to sub-50 nm dimensions. This paper summarizes results on transport and electrostatics at the few monolayer limit for silicon dioxide.
Keywords :
MOSFET; carrier mobility; dielectric thin films; electric current; electrostatics; monolayers; nanotechnology; semiconductor device testing; silicon compounds; surface potential; surface states; 1.2 to 1.5 nm; MOSFET scaling; MOSFETs; Si; SiO/sub 2/-Si; carrier flow control; carrier transport; currents; defect generation; electrostatics; few monolayer limit; oxide insulator thickness; oxide thickness; power dissipation; silicon dioxide; surface channel; surface potentials; MOSFETs; Voltage;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731100
