Title :
Novel InGaAsN pn junction for high-efficiency multiple-junction solar cells
Author :
Hou, H.Q. ; Reinhardt, K.C. ; Kurtz, S.R. ; Gee, J.M. ; Chang, P.C. ; Hammons, B.E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
This paper describes the development of a novel low bandgap (1.05 eV) p-n junction, based on InGaAsN, which is promising for next-generation high-efficiency multiple junction solar cells for use in space power systems. The paper describes simulations, the development of an MOCVD growth procedure, and testing of diode characteristics and photovoltaic properties.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; narrow band gap semiconductors; p-n junctions; semiconductor device models; semiconductor device testing; solar cells; space power generation; vapour phase epitaxial growth; 1.05 eV; InGaAsN; InGaAsN pn junction; MOCVD growth; bandgap; diode characteristics; multiple-junction solar cells; p-n junction; photovoltaic properties; simulations; space power systems; testing; Diodes; MOCVD; P-n junctions; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Power system simulation; Solar power generation; Testing;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731123
