Novel InGaAsN pn junction for high-efficiency multiple-junction solar cells

Author

Hou, H.Q. ; Reinhardt, K.C. ; Kurtz, S.R. ; Gee, J.M. ; Chang, P.C. ; Hammons, B.E.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1998

fDate

22-24 June 1998

Firstpage

64

Lastpage

65

Abstract

This paper describes the development of a novel low bandgap (1.05 eV) p-n junction, based on InGaAsN, which is promising for next-generation high-efficiency multiple junction solar cells for use in space power systems. The paper describes simulations, the development of an MOCVD growth procedure, and testing of diode characteristics and photovoltaic properties.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; narrow band gap semiconductors; p-n junctions; semiconductor device models; semiconductor device testing; solar cells; space power generation; vapour phase epitaxial growth; 1.05 eV; InGaAsN; InGaAsN pn junction; MOCVD growth; bandgap; diode characteristics; multiple-junction solar cells; p-n junction; photovoltaic properties; simulations; space power systems; testing; Diodes; MOCVD; P-n junctions; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Power system simulation; Solar power generation; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731123

Filename

731123