P1J-1 Temperature Characteristics of Pure Shear Mode FBARs Consisting of (1120) Textured ZnO Films

Author

Yanagitani, Takahiko ; Kiuchi, Masato ; Matsukawa, Mami ; Watanabe, Yoshiaki

Author_Institution

Kansai collaboration center, National Inst. of Adv. Ind. Sci. & Technol., Osaka

fYear

2006

fDate

2-6 Oct. 2006

Firstpage

1459

Lastpage

1462

Abstract

Thickness extensional mode FBAR consisting of (0001) textured ZnO films and pure thickness shear mode FBAR consisting of (112macr0) textured ZnO films were fabricated. Temperature coefficients of frequency (TCF) of these FBARs were measured in the temperature range of 10-60 degC. In both of the resonators, the parallel resonant frequencies varied linearly with temperature. The TCF were determined as -63.1 [ppm/degC] for thickness extensional mode resonator and -34.7 [ppm/degC] for pure-shear mode resonator

Keywords

II-VI semiconductors; acoustic resonators; bulk acoustic wave devices; thin films; wide band gap semiconductors; zinc compounds; (0001) textured ZnO film; (112macr0) textured ZnO film; 10 to 60 C; ZnO; parallel resonant frequency; pure shear mode FBAR; pure-shear mode resonator; temperature coefficients of frequency; thickness extensional mode FBAR; thickness extensional mode resonator; Electrodes; Film bulk acoustic resonators; Frequency; Piezoelectric films; Sensor phenomena and characterization; Sputtering; Substrates; Temperature distribution; Temperature measurement; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2006. IEEE

Conference_Location

Vancouver, BC

ISSN

1051-0117

Print_ISBN

1-4244-0201-8

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2006.367

Filename

4152223