Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

Author

Dolny, G.M. ; Morisette, D.T. ; Shenoy, P.M. ; Zafrani, M. ; Gladish, J. ; Woodall, J.M. ; Cooper, J.A., Jr. ; Melloch, M.R.

Author_Institution

Harris Semicond., Mountaintop, PA, USA

fYear

1998

fDate

22-24 June 1998

Firstpage

84

Lastpage

85

Abstract

SiC devices offer potential advantages in power switching applications due to their wide band gap and higher breakdown field compared to silicon. It is widely felt that the first commercial application of SiC power devices will be Schottky diodes used as flyback rectifiers for silicon IGBTs driving inductive loads (motors). The simple substitution of SiC Schottky diodes in place of silicon PiN diodes in these circuits can reduce the overall switching loss of the circuit by up to 35%.

Keywords

Schottky diodes; current density; electric breakdown; losses; power semiconductor diodes; power semiconductor switches; semiconductor materials; silicon compounds; solid-state rectifiers; Schottky diodes; Si; SiC; SiC Schottky diodes; SiC devices; SiC power devices; band gap; breakdown field; current density; dynamic characterization; flyback rectifiers; inductive loads; large-area SiC Schottky diodes; motors; power switching applications; silicon IGBTs; silicon PiN diodes; static characterization; switching loss; Circuits; Electric breakdown; Induction motors; Insulated gate bipolar transistors; Rectifiers; Schottky diodes; Silicon carbide; Switching loss; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731131

Filename

731131