4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage

Author

Singh, R. ; Irvine, K.G. ; Kordina, O. ; Palmour, J.W. ; Levinshtein, M.E. ; Rumyanestev, S.L.

Author_Institution

Cree Res. Inc., Durham, NC, USA

fYear

1998

fDate

22-24 June 1998

Firstpage

86

Lastpage

87

Abstract

High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to <50 kHz and <120°C, thereby severely limiting the availability of advanced electronic hardware used for energy storage, pulsed power, intelligent machinery and solid state power conditioning. These components require high power density, very high frequency, high temperature devices like the 4H-SiC P-i-N rectifier. This paper reports the design, fabrication and characterization of such a rectifier with a blocking voltage >5.5 kV, good on-state and fast switching characteristics. This is the highest blocking voltage 4H-SiC device reported to date.

Keywords

p-i-n diodes; power semiconductor diodes; power semiconductor switches; semiconductor device testing; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 120 C; 4H-SiC P-i-N rectifier; 4H-SiC bipolar P-i-N diodes; 5.5 kV; 50 kHz; Si; SiC; blocking voltage; electronic hardware; energy storage; high power density devices; high temperature devices; high voltage Si P-i-N diodes; intelligent machinery; on-state; pulsed power; rectifier blocking voltage; semiconductor materials; solid state power conditioning; switching characteristics; very high frequency devices; Availability; Energy storage; Hardware; Machine intelligence; Machinery; P-i-n diodes; Rectifiers; Semiconductor materials; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731132

Filename

731132