P1J-5 Spurious Modes in Aluminum Nitride Film Resonators

Author

Gong, Xun ; Duan, Jie ; Shang, Xiaoli ; Xiong, Jun ; De Zhang

Author_Institution

Inst. of Acoust., Nanjing Univ.

fYear

2006

fDate

2-6 Oct. 2006

Firstpage

1471

Lastpage

1473

Abstract

In this paper, we use a hybrid method which combines the traditional guided waves concept and FEM (finite element method) to analyze the spurious modes of aluminum nitride (AlN) film with electrodes. First, the guided wave modes in plated area are gotten by 1-D FEM. The vibration of the film resonator is a superposition of all the guided modes. We find that for AlN film resonator, a thickness-stretch mode resonator, there are three families of spurious modes, extension, thickness-stretch and thickness-shear. The spectrum of spurious modes is calculated and the influence of the spurious modes is discussed

Keywords

III-V semiconductors; acoustic resonators; aluminium compounds; finite element analysis; lattice dynamics; thin films; wide band gap semiconductors; 1D FEM; AlN; aluminum nitride film resonators; extension mode; film resonator vibration; finite element method; guided waves concept; resonator spurious modes; thickness-shear mode; thickness-stretch mode resonator; Acoustical engineering; Aluminum nitride; Electrodes; Film bulk acoustic resonators; Finite element methods; Frequency; Mobile communication; Mobile handsets; Piezoelectric films; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2006. IEEE

Conference_Location

Vancouver, BC

ISSN

1051-0117

Print_ISBN

1-4244-0201-8

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2006.370

Filename

4152226