Title :
SiC MESFET with output power of 50 watts CW at S-band
Author :
Sadler, R.A. ; Allen, S.T. ; Alcorn, T.S. ; Pribble, W.L. ; Sumakeris, J. ; Palmour, J.W. ; Kehias, L.T.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
Abstract :
A SiC MESFET with 42 mm gate periphery on a single die had a maximum RF output power of 53 W CW with 37% power-added efficiency (PAE) at 3.0 GHz. This unprecedented power from a die with an area of only 3 mm/sup 2/ demonstrates the extremely high power handling capability of SiC microwave devices. Additionally, we report here SiC MESFETs showing 2.5 W/mm performance with 41% PAE at 8 GHz, demonstrating the utility of this technology at X-band.
Keywords :
microwave field effect transistors; power MESFET; semiconductor device testing; silicon compounds; wide band gap semiconductors; 1.55 to 5.2 GHz; 3 GHz; 37 percent; 41 percent; 42 mm; 5.2 to 10.9 GHz; 50 W; 53 W; 8 GHz; MESFET output power; RF output power; S-band MESFET; SiC; SiC MESFET; SiC microwave devices; X-band MESFET; die area; gate periphery; power handling; power-added efficiency; MESFETs; Power generation; Silicon carbide;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731135
