Recent progress in 4H-SiC static induction transistors for high frequency power generation

Author

Bojko, R. ; Siergiej, R.R. ; Eldridge, G.W. ; Chen, L.-S. ; Morse, A.W. ; Ostop, J. ; Esker, P.M. ; Barron, B. ; Clarke, R.C. ; Brandt, C.D.

Author_Institution

Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA

fYear

1998

fDate

22-24 June 1998

Firstpage

96

Lastpage

97

Abstract

For the first time, 4H-SiC static induction transistors (SITs) have demonstrated 400 W pulsed L-band (1.3 GHz) performance (16.7 W/cm source periphery). Additionally, air-bridged parts have shown 78 W pulsed S-band (2.9 GHz) performance (15.1 W/cm source periphery), as well as 47 W pulsed S-band (4 GHz) performance, which represents the highest power densities yet reported for microwave SITs. The extraordinarily high power densities observed in SiC SITs derive from the remarkable physical properties of SiC. The high value of breakdown field strength (∼3 MV/cm), the large value of saturated electron velocity (2×10/sup 7/ cm/s), and the metallic-like thermal conductivity (4.9 W/cm·K) synergistically combine to generate the observed high power densities at high frequency.

Keywords

electron mobility; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; silicon compounds; static induction transistors; thermal conductivity; wide band gap semiconductors; 1.3 GHz; 2.9 GHz; 20000000 cm/s; 4 GHz; 400 W; 47 W; 4H-SiC static induction transistors; 78 W; SITs; SiC; SiC SITs; SiC physical properties; air-bridged parts; breakdown field strength; high frequency power generation; metallic-like thermal conductivity; microwave SITs; power density; pulsed L-band performance; pulsed S-band performance; saturated electron velocity; source periphery; Frequency; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731137

Filename

731137