DocumentCode :
2353934
Title :
Bipolar MOS power device simulator TonaddeIIc taking into account external circuit
Author :
Nakagawa, Akio ; Sato, Koichi
Author_Institution :
Toshiba R&D Center
fYear :
1990
fDate :
1990
Firstpage :
32
Lastpage :
37
Keywords :
Circuit simulation; Convergence; Diodes; Electrodes; Jacobian matrices; Mesh generation; Research and development; Snubbers; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991054
Filename :
991054
Link To Document :
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