Evaluation of AlGaN-GaN HFETs up to 750/spl deg/C

Author

Daumiller, I. ; Kirchner, C. ; Kamp, K. ; Ebeling, K.J. ; Pond, L. ; Weitzel, C.E. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

1998

fDate

22-24 June 1998

Firstpage

114

Lastpage

115

Abstract

GaN based FET structures offer the potential of high speed, high power and high temperature operation beyond that of GaAs based FET devices, which have been operated up to 500°C. Here, operation of a Si-doped channel AlGaN-GaN HFET up to 750°C in vacuum is evaluated. Specifically, three parts of the device structure were evaluated: (a) the Schottky contact, (b) the active channel region with its channel sheet charge, and (c) the buffer layer.

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; doping profiles; field effect transistors; gallium compounds; semiconductor device testing; semiconductor heterojunctions; silicon; thermal analysis; 500 C; 750 C; AlGaN-GaN HFETs; AlGaN-GaN:Si; GaAs based FET devices; GaN based FET structures; Schottky contact; Si-doped channel AlGaN-GaN HFET; active channel region; buffer layer; channel sheet charge; device structure; high power operation; high speed operation; high temperature operation; operating temperature; vacuum operation; Aluminum gallium nitride; Buffer layers; FETs; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Schottky barriers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731144

Filename

731144