• DocumentCode
    2354040
  • Title

    Tri-layer a-Si:H TFTs on polymeric substrates

  • Author

    Thomasson, D.B. ; Bonse, M. ; Koval, R.J. ; Huang, J.R. ; Wronski, C.R. ; Jackson, T.N.

  • Author_Institution
    Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    1998
  • fDate
    22-24 June 1998
  • Firstpage
    126
  • Lastpage
    127
  • Abstract
    Large area electronic applications such as active matrix flat panel displays currently use glass as substrate material. Glass substrates are available with large area, low cost, and with flat and smooth surfaces that simplify device processing. Glass is also heavy and fragile, however, and alternatives are of interest. Using a mountant technique, we have fabricated hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.
  • Keywords
    amorphous semiconductors; carrier mobility; elemental semiconductors; flat panel displays; hydrogen; liquid crystal displays; polymers; silicon; thin film transistors; Si:H; a-Si:H TFTs; a-Si:H circuits; a-Si:H devices; active matrix flat panel displays; colored polyimide substrates; device processing; extrinsic mobility; flat smooth surfaces; glass fragility; glass substrate material; glass weight; hydrogenated amorphous silicon thin film transistors; large area electronic applications; mountant technique; nearly colorless polyimide substrates; polymeric substrates; thermal engineering; tri-layer a-Si:H TFTs; Amorphous silicon; Circuits; Costs; Flat panel displays; Glass; Polyimides; Polymers; Substrates; Thermal engineering; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 1998. 56th Annual
  • Conference_Location
    Charlottesville, VA, USA
  • Print_ISBN
    0-7803-4995-4
  • Type

    conf

  • DOI
    10.1109/DRC.1998.731150
  • Filename
    731150