Direct-bonding and flip-chip bonding technologies applied to Si/PLZT spatial light modulator fabrication

Author

Jin, M.S. ; Wang, J.H. ; Lu, D.T. ; Ozguz, V. ; Lee, S.H.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

1995

fDate

21-24 May 1995

Firstpage

194

Lastpage

200

Abstract

A versatile technology to graft thin (~2 μm thick) Si circuit layers onto a new host substrate by substrate removal and direct bonding (SR/DB) is presented. This technology has been combined with a self-aligning low-temperature flip-chip bonding technology to fabricate a hybrid Si/PLZT smart spatial light modulator structure consisting of a high voltage driver circuit array, foundry-processed logic chip, and ferroelectric PLZT substrate. Thin Si detectors (1 μm thick) with quantum efficiency of ~0.80 has also been implemented in the direct-bonded driver circuit to allow each pixel to be addressed optically. The SR/DB technology can also be applied to bond thin circuit layers onto substrates of any type or shape that may be useful for electronic packaging

Keywords

flip-chip devices; lanthanum compounds; lead compounds; optical fabrication; piezoceramics; silicon; spatial light modulators; wafer bonding; Si detectors; Si-PLZT; Si-PbLaZrO3TiO3; direct bonding; electronic packaging; fabrication; ferroelectric PLZT substrate; flip-chip bonding; foundry-processed logic chip; high voltage driver circuit array; hybrid Si/PLZT smart spatial light modulator; quantum efficiency; self-aligning low-temperature technology; substrate removal; Bonding; Driver circuits; Ferroelectric materials; Logic arrays; Logic circuits; Optical arrays; Optical modulation; Shape; Strontium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1995. Proceedings., 45th

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2736-5

Type

conf

DOI

10.1109/ECTC.1995.514384

Filename

514384