DocumentCode :
2354186
Title :
Latching in N-channel, high-voltage hybrid SINFET´s
Author :
Chow, T.P. ; Pattanayak, D.N. ; Baliga, B.J. ; Adler, M.S.
Author_Institution :
General Electric Corporate Research and Development
fYear :
1990
fDate :
1990
Firstpage :
108
Lastpage :
115
Keywords :
Conductivity; Current measurement; Doping; FETs; Insulated gate bipolar transistors; Insulation; Research and development; Temperature control; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991069
Filename :
991069
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2354186
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