DocumentCode :
2354310
Title :
Impact of ultra clean wafer processings on power devices
Author :
Ohmi, Tadahiro
Author_Institution :
Tohoku University
fYear :
1990
fDate :
1990
Firstpage :
157
Lastpage :
162
Keywords :
Dark current; Fabrication; Fluctuations; Manufacturing processes; Plasma temperature; Process control; Semiconductor device manufacture; Surface cleaning; Surface contamination; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991077
Filename :
991077
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2354310
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