DocumentCode :
2354329
Title :
Fabrication technique of silicon power devices by liquid phase epitaxy
Author :
Sukegawa, T. ; Kimura, M. ; Nim, C. ; Yano, K. ; Tanaka, A.
Author_Institution :
Shizuoka University
fYear :
1990
fDate :
1990
Firstpage :
163
Lastpage :
168
Keywords :
Atomic layer deposition; Atomic measurements; Doping; Epitaxial growth; Fabrication; Impurities; Lattices; Silicon; Substrates; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991078
Filename :
991078
Link To Document :
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