DocumentCode
2354352
Title
Annealing behaviour of ion implanted aluminum in silicon
Author
Stockmeier, T. ; Braesch, P. ; Halder, E. ; Kluge-Weiss, P. ; Roggwiller, P. ; Stucki, F.
Author_Institution
ABB Asea Brown Boveri Corporate Research
fYear
1990
fDate
1990
Firstpage
169
Lastpage
173
Keywords
Aluminum oxide; Electric resistance; Elementary particle vacuum; Furnaces; Ion implantation; Rapid thermal annealing; Resists; Silicon; Vacuum systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN
1063-6854
Type
conf
DOI
10.1109/ISPSD.1990.991079
Filename
991079
Link To Document