DocumentCode :
2354357
Title :
Short-cavity 1.55 μm DBR lasers integrated with high-speed EAM modulators
Author :
Wang, Chad S. ; Skogen, Erik J. ; Raring, James W. ; Morrison, Gordon B. ; Coldren, Larry A.
Author_Institution :
Dept. of ECE, California Univ., Santa Barbara, CA, USA
fYear :
2004
fDate :
25-25 Sept. 2004
Firstpage :
8
Lastpage :
9
Abstract :
Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; quantum well lasers; 10 Gbit/s; DBR lasers; InGaAsP-InP; InGaAsP/InP lasers; RF bandwidths; dynamic extinction; electroabsorption modulators; high-speed modulators; integrated EAM; optical design; optical fabrication; quantum well intermixing; short-cavity lasers; Annealing; Distributed Bragg reflectors; Distributed feedback devices; Laser feedback; Laser modes; Mirrors; Optical design; Photoluminescence; Power lasers; Quantum well lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
Type :
conf
DOI :
10.1109/ISLC.2004.1382727
Filename :
1382727
Link To Document :
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