Short-cavity 1.55 μm DBR lasers integrated with high-speed EAM modulators

Author

Wang, Chad S. ; Skogen, Erik J. ; Raring, James W. ; Morrison, Gordon B. ; Coldren, Larry A.

Author_Institution

Dept. of ECE, California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

8

Lastpage

9

Abstract

Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; quantum well lasers; 10 Gbit/s; DBR lasers; InGaAsP-InP; InGaAsP/InP lasers; RF bandwidths; dynamic extinction; electroabsorption modulators; high-speed modulators; integrated EAM; optical design; optical fabrication; quantum well intermixing; short-cavity lasers; Annealing; Distributed Bragg reflectors; Distributed feedback devices; Laser feedback; Laser modes; Mirrors; Optical design; Photoluminescence; Power lasers; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382727

Filename

1382727