• DocumentCode
    2354364
  • Title

    High speed polysilicon deposition process for dielectric isolation technology

  • Author

    Itoh, S. ; Usui, T. ; Akahane, K. ; Ishikawa, N. ; Yokoyama, T. ; Maeda, Y.

  • Author_Institution
    Oki Electric Industry Co., Ltd.
  • fYear
    1990
  • fDate
    1990
  • Firstpage
    174
  • Lastpage
    179
  • Keywords
    Argon; Dielectric devices; Dielectric substrates; Filling; Isolation technology; Large scale integration; Resistance heating; Silicon; Spraying; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
  • ISSN
    1063-6854
  • Type

    conf

  • DOI
    10.1109/ISPSD.1990.991080
  • Filename
    991080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2354364