DocumentCode
2354379
Title
Small warpage dielectrically isolated wafer for power ICs by silicon wafer direct-bonding
Author
Furukawa, K. ; Nakagawa, A. ; Tanzawa, K. ; Kawamura, N.
Author_Institution
Toshiba Corp.
fYear
1990
fDate
1990
Firstpage
180
Lastpage
185
Keywords
Dielectric devices; Fabrication; Infrared imaging; Mirrors; Power integrated circuits; Silicon on insulator technology; Temperature; Very large scale integration; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN
1063-6854
Type
conf
DOI
10.1109/ISPSD.1990.991081
Filename
991081
Link To Document