Title :
Fabrication procedures and characterization of 6H-SiC MESFETs for use in high temperature electronics
Author :
Casady, B. ; Luckowski, E.D. ; Johnson, R.W. ; Crofton, J. ; Williams, J.R.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
6H-SiC MESFETs with 1 mm gate width and 10 μm gate length were manufactured on commercially available production grade 6H-SiC substrates purchased from Cree Research, Inc. While numerous SiC devices such as MESFETs, MOSFETs, thyristors, and diodes have been fabricated and tested, few papers detail processing and testing procedures. A typical processing and testing sequence for a n-channel 6H-SiC MESFET is profiled here, demonstrating stable operation from 25°C to 250°C with small-signal voltage gain of 150 V/V. Operation up to 400°C was observed with degraded output characteristics
Keywords :
Schottky gate field effect transistors; high-temperature techniques; semiconductor materials; semiconductor technology; silicon compounds; 25 to 400 C; Cree Research; SiC; fabrication; high temperature electronics; n-channel 6H-SiC MESFETs; processing; small-signal voltage gain; testing; Diodes; Fabrication; MESFETs; MOSFETs; Manufacturing; Production; Silicon carbide; Testing; Thyristors; Voltage;
Conference_Titel :
Electronic Components and Technology Conference, 1995. Proceedings., 45th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2736-5
DOI :
10.1109/ECTC.1995.514395
